NSTB1002DXV5T1G دیتاشیت

NSTB1002DXV5T1G

مشخصات دیتاشیت

نام دیتاشیت NSTB1002DXV5T1G
حجم فایل 99.028 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت NSTB1002DXV5T1G

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Digital Transistors
  • Datasheet: onsemi NSTB1002DXV5T1G
  • Transistor Type: 1 NPN - Pre-Biased,1 PNP
  • Collector Current (Ic): 100mA;200mA
  • Power Dissipation (Pd): 500mW
  • Transition Frequency (fT): 250MHz
  • DC Current Gain (hFE@Ic,Vce): 80@5mA,10V;100@1mA,10V
  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V;40V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@10mA,300uA;400mV@50mA,5mA
  • Package: SOT-553
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 100mA, 200mA
  • Voltage - Collector Emitter Breakdown (Max): 50V, 40V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 500mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: SOT-553
  • Base Part Number: NSTB10
  • detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 200mA 250MHz 500mW Surface Mount SOT-553

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