NSVEMT1DXV6T1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NSVEMT1DXV6T1G
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حجم فایل
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76.436
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi NSVEMT1DXV6T1G
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Transistor Type:
2PCSPNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
500mW
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Transition Frequency (fT):
140MHz
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DC Current Gain (hFE@Ic,Vce):
120@1mA,6V
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Collector Cut-Off Current (Icbo):
500pA
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Collector-Emitter Breakdown Voltage (Vceo):
60V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@50mA,5mA
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Package:
SOT-563
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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Current - Collector (Ic) (Max):
100mA
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Voltage - Collector Emitter Breakdown (Max):
60V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 5mA, 50mA
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Current - Collector Cutoff (Max):
500pA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 6V
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Power - Max:
500mW
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Frequency - Transition:
140MHz
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Mounting Type:
Surface Mount
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Package / Case:
SOT-563, SOT-666
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Supplier Device Package:
SOT-563
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Base Part Number:
NSVEMT1
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detail:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 100mA 140MHz 500mW Surface Mount SOT-563
