CPH5520-TL-E دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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CPH5520-TL-E
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حجم فایل
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56.077
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi CPH5520-TL-E
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Transistor Type:
NPN&PNP(耦合发射器)
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Collector Current (Ic):
2A
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Power Dissipation (Pd):
1.2W
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Transition Frequency (fT):
420MHz
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DC Current Gain (hFE@Ic,Vce):
200@100mA,2V
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Collector Cut-Off Current (Icbo):
1uA
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Collector-Emitter Breakdown Voltage (Vceo):
80V;50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
260mV@50mA,1A
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Package:
CPH-5
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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Current - Collector (Ic) (Max):
2A
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Voltage - Collector Emitter Breakdown (Max):
80V, 50V
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Vce Saturation (Max) @ Ib, Ic:
260mV @ 50mA, 1A
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Current - Collector Cutoff (Max):
1µA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
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Power - Max:
1.2W
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Frequency - Transition:
420MHz
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
SC-74A, SOT-753
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Supplier Device Package:
5-CPH
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Base Part Number:
CPH552
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detail:
Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 80V, 50V 2A 420MHz 1.2W Surface Mount 5-CPH
