FJE3303H2TU دیتاشیت

FJE3303H2TU

مشخصات دیتاشیت

نام دیتاشیت FJE3303H2TU
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت FJE3303H2TU

دانلود دیتاشیت

سایر مستندات

FJE3303 7 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi FJE3303H2TU
  • Transistor Type: NPN
  • Collector Current (Ic): 1.5A
  • Power Dissipation (Pd): 20W
  • Transition Frequency (fT): 4MHz
  • DC Current Gain (hFE@Ic,Vce): 14@500mA,2V
  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 3V@500mA,1.5A
  • Package: TO-126
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 1.5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 2V
  • Power - Max: 20W
  • Frequency - Transition: 4MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126-3
  • Base Part Number: FJE3303
  • detail: Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3

محصولات مشابه