NVTFWS008N04CTAG دیتاشیت

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مشاهده دیتاشیت NVTFWS008N04CTAG-Isee	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVTFWS008N04CTAG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.1W;38W
Total Gate Charge (Qg@Vgs): 10nC@10V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 625pF@25V
Continuous Drain Current (Id): 14A;48A
Gate Threshold Voltage (Vgs(th)@Id): 3.5V@30uA
Reverse Transfer Capacitance (Crss@Vds): 15pF@25V
Drain Source On Resistance (RDS(on)@Vgs,Id): 7.1mΩ@10V,15A
Package: DFN-8(3x3)
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 38W (Tc)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: NVTFWS
detail: N-Channel 40V 14A (Ta), 48A (Tc) 3.1W (Ta), 38W (Tc) Surface Mount, Wettable Flank 8-WDFN (3.3x3.3)