SMMJT350T1G دیتاشیت

SMMJT350T1G

مشخصات دیتاشیت

نام دیتاشیت SMMJT350T1G
حجم فایل 63.891 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت SMMJT350T1G

دانلود دیتاشیت

سایر مستندات

MMJT350 5 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi SMMJT350T1G
  • Transistor Type: PNP
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 500mA
  • Power Dissipation (Pd): 650mW
  • DC Current Gain (hFE@Ic,Vce): 30@50mA,10V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 300V
  • Package: SOT-223-4
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Obsolete
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 2.75W
  • Frequency - Transition: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
  • Base Part Number: MMJT35
  • detail: Bipolar (BJT) Transistor PNP 300V 500mA 2.75W Surface Mount SOT-223

محصولات مشابه