EFC6601R-TR دیتاشیت

EFC6601R-TR

مشخصات دیتاشیت

نام دیتاشیت EFC6601R-TR
حجم فایل 51.99 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت EFC6601R-TR-Isee

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مشخصات فنی

  • RoHS: true
  • Type: 2 N-Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi EFC6601R-TR
  • Power Dissipation (Pd): 2W
  • Total Gate Charge (Qg@Vgs): 48nC@4.5V
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: WLCSP-4
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Discontinued at Digi-Key
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, FCBGA
  • Supplier Device Package: EFCP2718-6CE-020
  • Base Part Number: EFC6601
  • detail: Mosfet Array 2 N-Channel (Dual) 2W Surface Mount EFCP2718-6CE-020

محصولات مشابه