NSB9435T1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NSB9435T1G
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حجم فایل
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93.472
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Digital Transistors
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Datasheet:
onsemi NSB9435T1G
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
550mV@300mA,3A
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Package:
SOT-223
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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Transistor Type:
PNP - Pre-Biased
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Current - Collector (Ic) (Max):
3A
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Voltage - Collector Emitter Breakdown (Max):
30V
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Resistor - Base (R1):
10 kOhms
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DC Current Gain (hFE) (Min) @ Ic, Vce:
125 @ 800mA, 1V
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Vce Saturation (Max) @ Ib, Ic:
550mV @ 300mA, 3A
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Current - Collector Cutoff (Max):
-
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Frequency - Transition:
110MHz
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Power - Max:
720mW
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Mounting Type:
Surface Mount
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Package / Case:
TO-261-4, TO-261AA
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Supplier Device Package:
SOT-223
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Base Part Number:
NSB943
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detail:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30V 3A 110MHz 720mW Surface Mount SOT-223
