NSVF3007SG3T1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NSVF3007SG3T1G
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حجم فایل
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59.571
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi NSVF3007SG3T1G
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
30mA
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Power Dissipation (Pd):
350mW
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Transition Frequency (fT):
8GHz
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DC Current Gain (hFE@Ic,Vce):
60@5mA,5V
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Collector Cut-Off Current (Icbo):
1uA
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Collector-Emitter Breakdown Voltage (Vceo):
12V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
-
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Package:
SC-70FL
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Manufacturer:
onsemi
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Series:
Automotive, AEC-Q101
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Packaging:
Cut Tape (CT)
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Part Status:
Discontinued at Digi-Key
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Voltage - Collector Emitter Breakdown (Max):
12V
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Frequency - Transition:
8GHz
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Noise Figure (dB Typ @ f):
1.8dB @ 1GHz
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Gain:
12dB
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Power - Max:
350mW
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DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 5V
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Current - Collector (Ic) (Max):
30mA
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Mounting Type:
Surface Mount
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Package / Case:
SOT-23-3 Flat Leads
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Supplier Device Package:
3-MCPH
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Base Part Number:
NSVF30
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detail:
RF Transistor NPN 12V 30mA 8GHz 350mW Surface Mount 3-MCPH
