NVTFS6H860NLTAG دیتاشیت

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مشاهده دیتاشیت NVTFS6H860NLTAG	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVTFS6H860NLTAG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.1W;42W
Total Gate Charge (Qg@Vgs): 12nC@10V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 610pF@40V
Continuous Drain Current (Id): 8.1A;30A
Gate Threshold Voltage (Vgs(th)@Id): 2V@30uA
Reverse Transfer Capacitance (Crss@Vds): 5pF@40V
Drain Source On Resistance (RDS(on)@Vgs,Id): 16.5mΩ@10V,5A
Package: WDFN-8(3.3x3.3)
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 40V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
detail: N-Channel 80V 8.1A (Ta), 30A (Tc) 3.1W (Ta), 42W (Tc) Surface Mount 8-WDFN (3.3x3.3)