دیتاشیت FQU2N50BTU-WS
مشخصات دیتاشیت
| نام دیتاشیت |
FQU2N50B
|
| حجم فایل |
783.582
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
QFET®
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
500V
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Current - Continuous Drain (Id) @ 25°C:
1.6A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
5.3Ohm @ 800mA, 10V
-
Vgs(th) (Max) @ Id:
3.7V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
8nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
230pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
2.5W (Ta), 30W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
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Supplier Device Package:
I-PAK
-
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
-
Base Part Number:
FQU2
-
detail:
N-Channel 500V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Through Hole I-PAK
