NTTFS015P03P8ZTAG دیتاشیت

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RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTTFS015P03P8ZTAG
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.66W;33.8W
Total Gate Charge (Qg@Vgs): 62.3nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 2706pF@15V
Continuous Drain Current (Id): 13.4A;47.6A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 9.3mΩ@12A,10V
Package: DFN-8(3.3x3.3)
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62.3nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2706pF @ 15V
FET Feature: -
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: NTTFS015
detail: P-Channel 30V 13.4A (Ta), 47.6A (Tc) 2.66W (Ta), 33.8W (Tc) Surface Mount 8-WDFN (3.3x3.3)