MJD6039 دیتاشیت

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مشاهده دیتاشیت MJD6039	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Darlington Transistors
Datasheet: onsemi NJVMJD6039T4G
Transistor Type: NPN
Operating Temperature: -65°C~+150°C@(Tj)
Collector Current (Ic): 4A
Power Dissipation (Pd): 1.75W
Transition frequency (fT): -
DC current gain (hFE@Vce,Ic): 500@4V,2A
Collector-emitter voltage (Vceo): 80V
Collector cut-off current (Icbo@Vcb): 10uA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 2.5V@2A,8mA
Package: TO-252
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Power - Max: 1.75W
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD60
detail: Bipolar (BJT) Transistor NPN - Darlington 80V 4A 1.75W Surface Mount DPAK