EFC4C012NLTDG دیتاشیت

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مشاهده دیتاشیت EFC4C012NLTDG-Isee	دانلود دیتاشیت

RoHS: true
Type: 2PCSNChannel(Common Drain)
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi EFC4C012NLTDG
Power Dissipation (Pd): 2.5W
Total Gate Charge (Qg@Vgs): 18nC@4.5V
Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
Package: WLCSP-6
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-WLCSP (3.5x1.9)
Base Part Number: EFC4C01
detail: Mosfet Array 2 N-Channel (Dual) Common Drain 2.5W (Ta) Surface Mount 6-WLCSP (3.5x1.9)