NSS20501UW3TBG دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NSS20501UW3TBG
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حجم فایل
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102.053
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi NSS20501UW3TBG
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
875mW
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Transition Frequency (fT):
150MHz
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DC Current Gain (hFE@Ic,Vce):
200@2A,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
20V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
110mV@4A,400mA
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Package:
DFN-3(2x2)
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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Current - Collector (Ic) (Max):
5A
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Voltage - Collector Emitter Breakdown (Max):
20V
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Vce Saturation (Max) @ Ib, Ic:
125mV @ 400mA, 4A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 2V
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Power - Max:
875mW
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Frequency - Transition:
150MHz
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Mounting Type:
Surface Mount
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Package / Case:
3-WDFN Exposed Pad
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Supplier Device Package:
3-WDFN (2x2)
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Base Part Number:
NSS205
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detail:
Bipolar (BJT) Transistor NPN 20V 5A 150MHz 875mW Surface Mount 3-WDFN (2x2)
