NSS40301MDR2G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NSS40301MDR2G
|
|
حجم فایل
|
90.747
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
8
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi NSV40301MDR2G
-
Transistor Type:
2PCSNPN(Dual)
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
3A
-
Power Dissipation (Pd):
653mW
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
180@2A,2V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
115mV@200mA,2A
-
Package:
SOP-8
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
3A
-
Voltage - Collector Emitter Breakdown (Max):
40V
-
Vce Saturation (Max) @ Ib, Ic:
115mV @ 200mA, 2A
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 2A, 2V
-
Power - Max:
653mW
-
Frequency - Transition:
100MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
8-SOIC (0.154", 3.90mm Width)
-
Supplier Device Package:
8-SOIC
-
Base Part Number:
NSV403
-
detail:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 3A 100MHz 653mW Surface Mount 8-SOIC
