NJVMJD117T4G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NJVMJD117T4G
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حجم فایل
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56.966
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi NJVMJD117T4G
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Transistor Type:
PNP
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
2A
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Power Dissipation (Pd):
1.75W
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Transition frequency (fT):
25MHz
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DC current gain (hFE@Vce,Ic):
1000@3V,2A
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Collector-emitter voltage (Vceo):
100V
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Collector cut-off current (Icbo@Vcb):
20uA
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Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
3V@4A,40mA
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
2A
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Voltage - Collector Emitter Breakdown (Max):
100V
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Vce Saturation (Max) @ Ib, Ic:
2V @ 8mA, 2A
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Current - Collector Cutoff (Max):
20µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
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Power - Max:
20W
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Frequency - Transition:
25MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Supplier Device Package:
DPAK
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Base Part Number:
MJD11
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detail:
Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 20W Surface Mount DPAK
