NTMS4939NR2G دیتاشیت

NTMS4939NR2G

مشخصات دیتاشیت

نام دیتاشیت NTMS4939NR2G
حجم فایل 96.349 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت NTMS4939NR2G

دانلود دیتاشیت

سایر مستندات

NTMS4939N 6 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTMS4939NR2G
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: SOP-8
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Base Part Number: NTMS49
  • detail: N-Channel 30V 8A (Ta) 800mW (Ta) Surface Mount 8-SOIC

محصولات مشابه