FCU3400N80Z دیتاشیت

FCU3400N80Z

مشخصات دیتاشیت

نام دیتاشیت FCU3400N80Z
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FCU3400N80Z

دانلود دیتاشیت

سایر مستندات

FCD3400N80Z, FCU3400N80Z 11 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCU3400N80Z
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 32W
  • Total Gate Charge (Qg@Vgs): 9.6nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 400pF@100V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@200uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4Ω@1A,10V
  • Package: TO-251
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FCU3400
  • detail: N-Channel 800V 2A (Tc) 32W (Tc) Through Hole I-PAK

محصولات مشابه