NVTFS003N04C دیتاشیت

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مشاهده دیتاشیت NVTFS003N04C	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVTFWS003N04CTAG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.2W;69W
Total Gate Charge (Qg@Vgs): 23nC@10V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 1600pF@25V
Continuous Drain Current (Id): 22A;103A
Gate Threshold Voltage (Vgs(th)@Id): 3.5V@60uA
Reverse Transfer Capacitance (Crss@Vds): 28pF@25V
Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@10V,50A
Package: DFN-8(3x3)
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 69W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: NVTFWS
detail: N-Channel 40V 22A (Ta), 103A (Tc) 3.2W (Ta), 69W (Tc) Surface Mount 8-WDFN (3.3x3.3)