EFC3J018NUZTDG دیتاشیت

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مشاهده دیتاشیت EFC3J018NUZTDG-Isee	دانلود دیتاشیت

RoHS: true
Type: 2PCSNChannel(Common Drain)
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi EFC3J018NUZTDG
Power Dissipation (Pd): 2.5W
Total Gate Charge (Qg@Vgs): 75nC@4.5V
Input Capacitance (Ciss@Vds): -
Continuous Drain Current (Id): 23A
Gate Threshold Voltage (Vgs(th)@Id): 1.3V@1mA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 4.7mΩ@5A,4.5V
Package: WLCSP-6
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.5W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WLCSP (1.77x3.05)
Base Part Number: EFC3J018
detail: Mosfet Array 2 N-Channel (Dual) Common Drain 20V 23A (Ta) 2.5W (Ta) Surface Mount 6-WLCSP (1.77x3.05)