FDN5632N-F085 دیتاشیت

FDN5632N-F085

مشخصات دیتاشیت

نام دیتاشیت FDN5632N-F085
حجم فایل 50.018 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت FDN5632N-F085

دانلود دیتاشیت

سایر مستندات

FDN5632N-F085 6 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDN5632N-F085
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.1W
  • Total Gate Charge (Qg@Vgs): 9.2nC@0~10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 475pF@15V
  • Continuous Drain Current (Id): 1.7A
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 30pF@15V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 57mΩ@10V,1.7A
  • Package: SSOT-3
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101, PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Discontinued at Digi-Key
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Base Part Number: FDN563
  • detail: N-Channel 60V 1.7A (Ta) 1.1W (Ta) Surface Mount SuperSOT-3

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