NVMFD6H846NLWFT1G دیتاشیت

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مشاهده دیتاشیت NVMFD6H846NLWFT1G	دانلود دیتاشیت

RoHS: true
Type: 2 N-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVMFD6H846NLWFT1G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 34W
Total Gate Charge (Qg@Vgs): 8nC@4.5V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 900pF@40V
Continuous Drain Current (Id): 31A
Gate Threshold Voltage (Vgs(th)@Id): 2V@21uA
Reverse Transfer Capacitance (Crss@Vds): 7pF@40V
Drain Source On Resistance (RDS(on)@Vgs,Id): 12.2mΩ@10V,5A
Package: DFN-8(4.9x5.9)
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Power - Max: 3.2W (Ta), 34W (Tc)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
detail: Mosfet Array 2 N-Channel (Dual) 80V 9.4A (Ta), 31A (Tc) 3.2W (Ta), 34W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)