NVMFD5875NLWFT1G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NVMFD5875NL	دانلود دیتاشیت

مستندات دیگری یافت نشد!

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVMFD5875NLWFT1G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 32W
Total Gate Charge (Qg@Vgs): 5.9nC@4.5V
Drain Source Voltage (Vdss): 60V
Input Capacitance (Ciss@Vds): 540pF@25V
Continuous Drain Current (Id): 22A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Reverse Transfer Capacitance (Crss@Vds): 36pF@25V
Drain Source On Resistance (RDS(on)@Vgs,Id): 27mΩ@10V,7.5A
Package: DFN-8(5x6)
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 33mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Part Number: NVMFD5
detail: Mosfet Array 2 N-Channel (Dual) 60V 7A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)