FDU5N60NZTU دیتاشیت

FDU5N60NZTU

مشخصات دیتاشیت

نام دیتاشیت FDU5N60NZTU
حجم فایل 56.277 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت FDU5N60NZTU

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سایر مستندات

FDU5N60NZTU 9 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDU5N60NZTU
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: IPAK-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: DPAK3 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FDU5
  • detail: N-Channel 600V 4A (Tc) 83W (Tc) Through Hole DPAK3 (IPAK)

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