NVMYS2D1N04CLTWG دیتاشیت

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مشاهده دیتاشیت NVMYS2D1N04CLTWG	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVMYS2D1N04CLTWG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.9W;83W
Total Gate Charge (Qg@Vgs): 50nC@10V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 3100pF@25V
Continuous Drain Current (Id): 29A;132A
Gate Threshold Voltage (Vgs(th)@Id): 2V@90uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5mΩ@50A,10V
Package: LFPAK-4
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 132A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK4 (5x6)
Package / Case: SOT-1023, 4-LFPAK
Base Part Number: NVMYS2
detail: N-Channel 40V 29A (Ta), 132A (Tc) 3.9W (Ta), 83W (Tc) Surface Mount LFPAK4 (5x6)