NTMD4N03R2 دیتاشیت

NTMD4N03R2

مشخصات دیتاشیت

نام دیتاشیت NTMD4N03R2
حجم فایل 145.686 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت NTMD4N03R2

دانلود دیتاشیت

سایر مستندات

NVMD4N03R2G 10 pages

مشخصات فنی

  • RoHS: true
  • Type: 2 N-Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NVMD4N03R2G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2W
  • Total Gate Charge (Qg@Vgs): 16nC@10V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 400pF@20V
  • Continuous Drain Current (Id): 4A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 35pF@20V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 48mΩ@10V,4A
  • Package: SOP-8
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
  • Power - Max: 2W
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
  • Base Part Number: NVMD4
  • detail: Mosfet Array 2 N-Channel (Dual) 30V 4A 2W Surface Mount 8-SOIC

محصولات مشابه