دیتاشیت IRFW630BTM-FP001
مشخصات دیتاشیت
| نام دیتاشیت |
IRFW630B
|
| حجم فایل |
747.371
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
-
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Not For New Designs
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FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
200V
-
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
400mOhm @ 4.5A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
720pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
3.13W (Ta), 72W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK (TO-263AB)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
IRFW6
-
detail:
N-Channel 200V 9A (Tc) 3.13W (Ta), 72W (Tc) Surface Mount D²PAK (TO-263AB)
