FQB19N20TM دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FQB19N20TM	دانلود دیتاشیت

FQB19N20 10 pages

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FQB19N20TM
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.13W;140W
Total Gate Charge (Qg@Vgs): 31nC@10V
Drain Source Voltage (Vdss): 200V
Input Capacitance (Ciss@Vds): 1.22nF@25V
Continuous Drain Current (Id): 19.4A
Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
Reverse Transfer Capacitance (Crss@Vds): 30pF@25V
Drain Source On Resistance (RDS(on)@Vgs,Id): 120mΩ@10V,9.7A
Package: D2PAK
Manufacturer: onsemi
Series: QFET®
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: FQB1
detail: N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263AB)