NTTFS1D8N02P1E دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NTTFS1D8N02P1E-Isee	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTTFS1D8N02P1E
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 800mW;48W
Total Gate Charge (Qg@Vgs): 38nC@10V
Drain Source Voltage (Vdss): 25V
Input Capacitance (Ciss@Vds): 3159pF@13V
Continuous Drain Current (Id): 20A;152A
Gate Threshold Voltage (Vgs(th)@Id): 2V@700uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.3mΩ@30A,10V
Package: PQFN-8
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 152A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 3159pF @ 13V
FET Feature: -
Power Dissipation (Max): 800mW (Ta), 48W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3.3x3.3)
Package / Case: 8-PowerWDFN
detail: N-Channel 25V 20A (Ta), 152A (Tc) 800mW (Ta), 48W (Tc) Surface Mount 8-PQFN (3.3x3.3)