NVMYS4D1N06CLTWG دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NVMYS4D1N06CLTWG
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حجم فایل
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92.41
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NVMYS4D1N06CLTWG
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
3.7W;79W
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Total Gate Charge (Qg@Vgs):
34nC@10V
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Input Capacitance (Ciss@Vds):
2200pF@25V
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Continuous Drain Current (Id):
22A;100A
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Gate Threshold Voltage (Vgs(th)@Id):
2V@80uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
4mΩ@50A,10V
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Package:
SOT-1023
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Manufacturer:
onsemi
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Series:
Automotive, AEC-Q101
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 100A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
4mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id:
2V @ 80µA
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Gate Charge (Qg) (Max) @ Vgs:
34nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
2200pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
3.7W (Ta), 79W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
LFPAK4 (5x6)
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Package / Case:
SOT-1023, 4-LFPAK
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Base Part Number:
NVMYS4
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detail:
N-Channel 60V 22A (Ta), 100A (Tc) 3.7W (Ta), 79W (Tc) Surface Mount LFPAK4 (5x6)
