FDMC4D9P20X8 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FDMC4D9P20X8	دانلود دیتاشیت

RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMC4D9P20X8
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.4W;40W
Total Gate Charge (Qg@Vgs): 109nC@4.5V
Input Capacitance (Ciss@Vds): 10550pF@10V
Continuous Drain Current (Id): 18A;75A
Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 4.9mΩ@18A,4.5V
Package: PQFN-8(3.3x3.3)
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 10550pF @ 10V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta), 40W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: FDMC4
detail: P-Channel 20V 18A (Ta), 75A (Tc) 2.4W (Ta), 40W (Tc) Surface Mount 8-PQFN (3.3x3.3)