دیتاشیت FQPF8N90C
مشخصات دیتاشیت
| نام دیتاشیت |
FQP(F)8N90C
|
| حجم فایل |
1710.636
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Power Dissipation (Pd):
60W
-
Drain Source Voltage (Vdss):
900V
-
Continuous Drain Current (Id):
6.3A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.9Ω@10V,3.15A
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Package:
TO-220F-3
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Manufacturer:
onsemi
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Series:
QFET®
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
900V
-
Current - Continuous Drain (Id) @ 25°C:
6.3A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
1.9Ohm @ 3.15A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
2080pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
60W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220F
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Package / Case:
TO-220-3 Full Pack
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Base Part Number:
FQPF8
-
detail:
N-Channel 900V 6.3A (Tc) 60W (Tc) Through Hole TO-220F
