FCPF380N65FL1 دیتاشیت

FCPF380N65FL1

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نام دیتاشیت FCPF380N65FL1
حجم فایل 70.016 کیلوبایت
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تعداد صفحات 12

مشاهده دیتاشیت FCPF380N65FL1-Isee

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCPF380N65FL1
  • Power Dissipation (Pd): 33W
  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@10V,5.1A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: FRFET®, SuperFET® II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FCPF380
  • detail: N-Channel 650V 10.2A (Tc) 33W (Tc) Through Hole TO-220F

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