NVMFS5C410NLAFT1G دیتاشیت

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RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVMFS5C410NLAFT1G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 167W
Total Gate Charge (Qg@Vgs): 66nC@4.5V
Drain Source Voltage (Vdss): 40V
Input Capacitance (Ciss@Vds): 8.86nF@25V
Continuous Drain Current (Id): 330A
Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
Reverse Transfer Capacitance (Crss@Vds): 116pF@25V
Drain Source On Resistance (RDS(on)@Vgs,Id): 0.65mΩ@10V,50A
Package: DFN-5(5.9x4.9)
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8862pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads
Base Part Number: NVMFS5
detail: N-Channel 40V 50A (Ta), 330A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)