EFC4C002NLTDG دیتاشیت

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مشاهده دیتاشیت EFC4C002NLTDG-Isee	دانلود دیتاشیت

RoHS: true
Type: 2PCSNChannel(Common Drain)
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi EFC4C002NLTDG
Power Dissipation (Pd): 2.6W
Total Gate Charge (Qg@Vgs): 45nC@4.5V
Drain Source Voltage (Vdss): -
Input Capacitance (Ciss@Vds): 6200pF@15V
Continuous Drain Current (Id): -
Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): -
Package: WLCSP-8
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Power - Max: 2.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-XFBGA, WLCSP
Supplier Device Package: 8-WLCSP (6x2.5)
Base Part Number: EFC4C00
detail: Mosfet Array 2 N-Channel (Dual) Common Drain 2.6W Surface Mount 8-WLCSP (6x2.5)