دیتاشیت NTSB20120CT-1G
مشخصات دیتاشیت
نام دیتاشیت |
NTSx20120CT
|
حجم فایل |
91.812
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
9
|
مشخصات
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RoHS:
true
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Category:
Diodes/Schottky Barrier Diodes (SBD)
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Datasheet:
onsemi NTSB20120CT-1G
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Diode Configuration:
Dual Common Cathode
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Reverse Voltage (Vr):
120V
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Forward Voltage (Vf@If):
900mV@10A
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Reverse Leakage Current (Ir):
12uA@90V
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Average Rectified Current (Io):
10A
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Package:
I2PAK
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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Diode Type:
Schottky
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Voltage - DC Reverse (Vr) (Max):
120V
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Current - Average Rectified (Io) (per Diode):
10A
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Voltage - Forward (Vf) (Max) @ If:
1.1V @ 10A
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Speed:
Fast Recovery =< 500ns, > 200mA (Io)
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Current - Reverse Leakage @ Vr:
700µA @ 120V
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Operating Temperature - Junction:
-40°C ~ 150°C
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Mounting Type:
Through Hole
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Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
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Supplier Device Package:
I2PAK (TO-262)
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Base Part Number:
NTSB20
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detail:
Diode Array 1 Pair Common Cathode Schottky 120V 10A Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA