FQPF9P25YDTU دیتاشیت

FQPF9P25YDTU

مشخصات دیتاشیت

نام دیتاشیت FQPF9P25YDTU
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت FQPF9P25YDTU-Isee

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FQPF9P25YDTU 9 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQPF9P25YDTU
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 50W
  • Total Gate Charge (Qg@Vgs): 29nC@10V
  • Drain Source Voltage (Vdss): 250V
  • Input Capacitance (Ciss@Vds): 910pF@25V
  • Continuous Drain Current (Id): 6A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 27pF@25V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 480mΩ@10V,3A
  • Package: TO-220F-3
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
  • Base Part Number: FQPF9
  • detail: P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming)

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