NVMYS2D2N06CLTWG دیتاشیت

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مشاهده دیتاشیت NVMYS2D2N06CLTWG	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVMYS2D2N06CLTWG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.9W;134W
Total Gate Charge (Qg@Vgs): 69nC@10V
Input Capacitance (Ciss@Vds): 4850pF@25V
Continuous Drain Current (Id): 31A;185A
Gate Threshold Voltage (Vgs(th)@Id): 2V@180uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.9mΩ@50A,10V
Package: LFPAK-4
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK4 (5x6)
Package / Case: SOT-1023, 4-LFPAK
Base Part Number: NVMYS2
detail: N-Channel 60V 31A (Ta), 185A (Tc) 3.9W (Ta), 134W (Tc) Surface Mount LFPAK4 (5x6)