NVD5C632NLT4G دیتاشیت

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مشاهده دیتاشیت NVD5C632NLT4G	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVD5C632NLT4G
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 4W;115W
Total Gate Charge (Qg@Vgs): 78nC@10V
Drain Source Voltage (Vdss): 60V
Input Capacitance (Ciss@Vds): 5700pF@25V
Continuous Drain Current (Id): 29A;155A
Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5mΩ@10V,50A
Package: TO-252
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 155A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
FET Feature: -
Power Dissipation (Max): 4W (Ta), 115W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: NVD5C6
detail: N-Channel 60V 29A (Ta), 155A (Tc) 4W (Ta), 115W (Tc) Surface Mount DPAK