FDMC008N08C دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت FDMC008N08C	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMC008N08C
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 57W
Total Gate Charge (Qg@Vgs): 29nC@10V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 2150pF@40V
Continuous Drain Current (Id): 60A
Gate Threshold Voltage (Vgs(th)@Id): 4V@120uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 7.8mΩ@21A,10V
Package: PQFN-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 21A, 10V
Vgs(th) (Max) @ Id: 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 40V
FET Feature: -
Power Dissipation (Max): 57W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Package / Case: 8-PowerWDFN
Base Part Number: FDMC00
detail: N-Channel 80V 60A (Tc) 57W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33