- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت FDP12N50NZ
FDP12N50NZ دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FDP12N50NZ |
|---|---|
| حجم فایل | 86.239 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت FDP12N50NZ |
دانلود دیتاشیت |
|---|
سایر مستندات
TO220B03 Pkg Drawing 1 pages
FDP(F)12N50NZ 12 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDP12N50NZ
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 170W
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Drain Source Voltage (Vdss): 500V
- Input Capacitance (Ciss@Vds): 1235pF@25V
- Continuous Drain Current (Id): 11.5A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 520mΩ@5.75A,10V
- Package: TO-220
- Manufacturer: onsemi
- Series: UniFET-II™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FDP12
- detail: N-Channel 500V 11.5A (Tc) 170W (Tc) Through Hole TO-220-3