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- دیتاشیت FCPF7N60YDTU
FCPF7N60YDTU دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FCPF7N60YDTU |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 12 |
دانلود دیتاشیت FCPF7N60YDTU |
دانلود دیتاشیت |
|---|
سایر مستندات
FCP7N60, FCPF7N60 12 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FCPF7N60YDTU
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 31W
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 920pF@25V
- Continuous Drain Current (Id): 7A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 34pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 530mΩ@10V,3.5A
- Package: TO-220F
- Manufacturer: onsemi
- Series: SuperFET™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3 (Y-Forming)
- Package / Case: TO-220-3 Full Pack, Formed Leads
- Base Part Number: FCPF7
- detail: N-Channel 600V 7A (Tc) 31W (Tc) Through Hole TO-220F-3 (Y-Forming)
