FCP850N80Z دیتاشیت

FCP850N80Z

مشخصات دیتاشیت

نام دیتاشیت FCP850N80Z
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت FCP850N80Z

دانلود دیتاشیت

سایر مستندات

FCP850N80Z Datasheet 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCP850N80Z
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 136W
  • Total Gate Charge (Qg@Vgs): 29nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 1315pF@100V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@600uA
  • Reverse Transfer Capacitance (Crss@Vds): 0.74pF@100V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 710mΩ@10V,3A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FCP850
  • detail: N-Channel 800V 8A (Tc) 136W (Tc) Through Hole TO-220-3

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