دیتاشیت FCP9N60N
مشخصات دیتاشیت
| نام دیتاشیت | FCPF9N60N, FCPF9N60T |
|---|---|
| حجم فایل | 773.916 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 12 |
دانلود دیتاشیت FCPF9N60N, FCPF9N60T |
FCPF9N60N, FCPF9N60T Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FCP9N60N
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 83.3W
- Total Gate Charge (Qg@Vgs): 22nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 930pF@10V
- Continuous Drain Current (Id): 19A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 2pF@10V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 330mΩ@10V,4.5A
- Package: TO-220
- Manufacturer: onsemi
- Series: SuperMOS™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 83.3W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FCP9
- detail: N-Channel 600V 9A (Tc) 83.3W (Tc) Through Hole TO-220-3
