FDB3652 دیتاشیت

FDB3652

مشخصات دیتاشیت

نام دیتاشیت FDB3652
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

مشاهده دیتاشیت FDB3652

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDB3652
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 150W
  • Total Gate Charge (Qg@Vgs): 53nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 2880pF@25V
  • Continuous Drain Current (Id): 9A;61A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16mΩ@61A,10V
  • Package: TO-263-3
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Discontinued at Digi-Key
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: FDB365
  • detail: N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface Mount D²PAK

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