NVATS5A106PLZT4G دیتاشیت

NVATS5A106PLZT4G

مشخصات دیتاشیت

نام دیتاشیت NVATS5A106PLZT4G
حجم فایل 69.724 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NVATS5A106PLZT4G

دانلود دیتاشیت

سایر مستندات

NVATS4A104PZ 6 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NVATS4A104PZT4G
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 48W
  • Total Gate Charge (Qg@Vgs): 29nC@10V
  • Drain Source Voltage (Vdss): 40V
  • Input Capacitance (Ciss@Vds): 1.38nF@20V
  • Continuous Drain Current (Id): 33A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.6V@1mA
  • Reverse Transfer Capacitance (Crss@Vds): 150pF@20V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 19mΩ@10V,15A
  • Package: -
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 38A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 72W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: NVATS4
  • detail: P-Channel 30V 82A (Ta) 72W (Tc) Surface Mount ATPAK

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