دیتاشیت HUF75639P3-F102

HUF75639

مشخصات دیتاشیت

نام دیتاشیت HUF75639
حجم فایل 563.559 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت HUF75639

HUF75639 Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: HUF75
  • detail: N-Channel 100V 56A (Tc) 200W (Tc) Through Hole TO-220-3

دیتاشیت محصولات مشابه