دیتاشیت HUF75639P3-F102
مشخصات دیتاشیت
| نام دیتاشیت |
HUF75639
|
| حجم فایل |
563.559
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi HUF75639P3-F102
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
200W
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Total Gate Charge (Qg@Vgs):
130nC@20V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
2000pF@25V
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Continuous Drain Current (Id):
56A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
25mΩ@56A,10V
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Package:
TO-220
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
25mOhm @ 56A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
130nC @ 20V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
2000pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
200W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220-3
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Package / Case:
TO-220-3
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Base Part Number:
HUF75
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detail:
N-Channel 100V 56A (Tc) 200W (Tc) Through Hole TO-220-3
