FGPF4565 دیتاشیت

FGPF4565

مشخصات دیتاشیت

نام دیتاشیت FGPF4565
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت FGPF4565

دانلود دیتاشیت

سایر مستندات

FGPF4565 8 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi FGPF4565
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 30W
  • Turn?on Delay Time (Td(on)): 11.2ns
  • Total Gate Charge (Qg@Ic,Vge): 40.3nC
  • Turn?off Delay Time (Td(off)): 40.8ns
  • Pulsed Collector Current (Icm): 170A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.88V@15V,30A
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector Pulsed (Icm): 170A
  • Vce(on) (Max) @ Vge, Ic: 1.88V @ 15V, 30A
  • Power - Max: 30W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40.3nC
  • Td (on/off) @ 25°C: 11.2ns/40.8ns
  • Test Condition: 400V, 30A, 5Ohm, 15V
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
  • Base Part Number: FGPF4
  • detail: IGBT Trench Field Stop 650V 30W Through Hole TO-220F

محصولات مشابه