FQB8N60C, FQI8N60C دیتاشیت

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Manufacturer: ON Semiconductor
Series: QFET®
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK (TO-262)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number: FQI8
detail: N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Through Hole I2PAK (TO-262)